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Comparison of usability of oxide apertures and photonic crystals used to create radial optical confinements in 650-nm GaInPVCSELs

Publication date 2007
B-Phot Authors Krassimir Panajotov
DOI 10.1109/JQE.2007.904492
Citation
T. Czyszanowski et al., “Comparison of usability of oxide apertures and photonic crystals used to create radial optical confinements in 650-nm GaInPVCSELs,” IEEE J. Quantum Electron., vol. 43, no. 11–12, pp. 1041–1047, 2007.
Abstract Threshold characteristics of GaAs-based 650-nm gallium indium phosphide.(GaInP) vertical-cavity surface-emitting diode lasers (VCSELs) with two different optical confinement structures are investigated with the aid of a self-consistent, fully-physical VCSEL model. Efficacy of the optical confinement introduced by the oxide aperture is compared with an alternative single-defect photonic-crystal design with holes etched throughout the whole VCSEL. Initially, photonic-crystal VCSEL reveals 10% lower threshold electrical power than that of the analogous oxide-confined VCSEL. Further optimization of the current injection allows for an additional 20% threshold reduction. The photonic-crystal confinement concept appears to be a very prospective solution for VCSEL configurations, for which oxidation is unfeasible, e.g., for possible nitride or phosphide VCSELs.
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