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Iterative resonator model describing the Stokes and anti-Stokes emission of a continuous-wave silicon-based Raman laser

Publication date 2007
B-Phot Authors Nathalie Vermeulen, Hugo Thienpont
DOI 10.1117/12.698484
Citation
N. Vermeulen, C. Debaes, and H. Thienpont, “Iterative resonator model describing the Stokes and anti-Stokes emission of a continuous-wave silicon-based Raman laser,” in Proc. SPIE, 2007, vol. 6455, p. 64550N.
Abstract We present a novel numerical model that allows determining the Stokes and anti-Stokes emission characteristics of a continuous-wave silicon-based Raman laser. This so-called iterative resonator model evaluates for every half roundtrip time the longitudinal distribution of the intra-cavity pump, Stokes and anti-Stokes fields propagating in forward and backward directions, while taking into account the two-photon absorption losses and free carrier absorption losses occurring in the silicon laser medium. Furthermore, we demonstrate that our model exhibits important advantages in comparison with the power distribution model used for silicon-based Raman lasers. Finally, we present the first numerical simulation results for a silicon-based Raman laser emitting both Stokes and anti-Stokes photons.
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