A brighter, lighter and healthier world
Home » Publications » Modeling mid-infrared continuous-wave silicon-based Raman lasers

Modeling mid-infrared continuous-wave silicon-based Raman lasers

Publication date 2007
B-Phot Authors Nathalie Vermeulen, Hugo Thienpont
DOI 10.1117/12.698488
N. Vermeulen, C. Debaes, and H. Thienpont, “Modeling mid-infrared continuous-wave silicon-based Raman lasers,” in Proc. SPIE, 2007, vol. 6455, p. 64550U.
Abstract We present the first modeling results for the Stokes and anti-Stokes output of a mid-infrared continuous-wave silicon-based Raman laser. These emission characteristics are generated by the use of an iterative resonator model, the loss terms of which we adapted for the case of silicon-based Raman lasers operating in the mid-infrared spectral domain. These loss terms contain besides linear losses also the three-photon absorption losses that occur in this type of lasers. We discuss the behavior of this three-photon absorption mechanism and its influence on both the Stokes and anti-Stokes output. Finally, we compare these emission characteristics with the corresponding simulation results for a near-infrared silicon-based Raman laser in which linear losses, two-photon absorption losses and free carrier absorption losses occur.
B-PHOT cooperates with EYESTvzw for STEM-projects in Photonics

Click here for more information...


Hugo Thienpont
Prof. Dr. Ir.
Hugo Thienpont
Managing Director
Nadia Cornand

Nadia Cornand
+32 2 791 68 52

How to reach B-Phot?

VUB - Campus Etterbeek
Pleinlaan 2
1050 Elsene
Building F - 9th floor

More info