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Strong modes discrimination and low threshold in cw regime of 1300 nm AlInGaAs/InP VCSEL induced by photonic crystal

Publication date 2009
B-Phot Authors Hugo Thienpont, Krassimir Panajotov
DOI 10.1002/pssa.200824499
Citation
T. Czyszanowski, R. Sarzala, M. Dems, H. Thienpont, W. Nakwaski, and K. Panajotov, “Strong modes discrimination and low threshold in cw regime of 1300 nm AlInGaAs/InP VCSEL induced by photonic crystal,” Phys. Status Solidi A-Appl. Mat., vol. 206, no. 7, pp. 1396–1403, 2009.
Abstract A self-consistent electrical-thermal-optical-gain modeling of threshold characteristics of an InP-based 1300 nm AlInGaAs photonic-crystal vertical-cavity surface-emitting diode laser is presented. It is shown that low threshold characteristics and strong transverse-mode discrimination can be simultaneously achieved for optimized photonic crystal structure and current aperture. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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