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Wavelength Conversion Based on Raman- and Non-Resonant Four-Wave Mixing in Silicon Nanowire Rings Without Dispersion Engineering

Publication date 2011
B-Phot Authors Nathalie Vermeulen, Hugo Thienpont
DOI 10.1109/JSTQE.2010.2086437
Citation
N. Vermeulen, J. E. Sipe, Y. Lefevre, C. Debaes, and H. Thienpont, “Wavelength Conversion Based on Raman- and Non-Resonant Four-Wave Mixing in Silicon Nanowire Rings Without Dispersion Engineering,” IEEE J. Sel. Top. Quantum Electron, vol. 17, no. 4, pp. 1078–1091, 2011.
Abstract We propose an efficient wavelength conversion scheme that is based on either Raman-resonant four-wave mixing or non-resonant Kerr-induced four-wave mixing in a silicon nanowire ring, and that does not require dispersion engineering of the nanowire. We rely on the spatial variation of the Raman and Kerr susceptibilities around the ring to quasi-phase match the wavelength conversion processes for TE polarized fields. The flexibility of this quasi-phase-matching scheme can lead to wavelength conversion efficiencies from -26.7 dB to values larger than 0 dB, and in certain circumstances makes it possible to outperform conventional phase-matched conversion in a dispersion-engineered silicon ring by factors exceeding 6 dB.
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