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Integrated Photonics

Silicon photonic structures

The development of integrated optical devices on semiconductor wafers has dramatically changed the world of optics, photonics, and of science and technology in general. In electronics many billions of transistor elements can be integrated nowadays on complex Integrated Circuits (ICs) at consumer level costs. Similarly, it is the goal of photonic integration to implement several photonic functionalities on a single chip. Hereto one can rely on the photolithographic techniques that have already been developed and optimized for electronics fabrication. 

B-PHOT  has built up extensive expertise in the modeling and design of integrated photonic components with continuous-wave and pulsed operation. Here we focus both on nonlinear photonic functionalities such as Raman lasing and Kerr wavelength conversion, and on sub-wavelength plasmonic light confinement in waveguide structures through nanometallic objects. 

After the designed waveguide structures have been fabricated, we employ the state-of-the-art instruments in the cleanroom facilities of B-PHOT for the characterization of the waveguide components and for their proof-of-principle demonstrations. This equipment includes, amongst others, a nanopositioning setup for chip alignment, several continuous-wave and pulsed laser systems operating both in the near- and mid-infrared spectral domain, and high-performance power meters and spectrum analyzers.


Nathalie Vermeulen Nathalie Vermeulen

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Latest publications

  • T. D. Vo et al., “Photonic-Chip-Based Ultrafast Waveform Analysis and Optical Performance,” IEEE J. Sel. Top. Quantum Electron., vol. 18, no. 2, pp. 834–846, 2012.

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  • Y. Paquot et al., “Multi-order, automatic dispersion compensation for 1.28 Terabaud signals,” presented at the Proc. SPIE, Photonics Europe 2012, 2012, vol. 8434, p. 84340I.

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  • J. Schroeder, O. Brasier, J. Van Erps, M. A. F. Roelens, S. Frisken, and B. Eggleton, “OSNR Monitoring of a 1.28 Tbaud Signal by Interferometry Inside a Wavelength-Selective Switch,” J. Lightwave Technol., vol. 29, no. 10, pp. 1542–1546, 2011.

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  • I. H. Rey, Y. Lefevre, S. A. Schulz, N. Vermeulen, and T. F. Krauss, “Raman gain in realistic slow light photonic crystals,” in Proc. Group IV Photonics Conference, 2011.

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  • N. Vermeulen, J. E. Sipe, Y. Lefevre, C. Debaes, and H. Thienpont, “Wavelength Conversion Based on Raman- and Non-Resonant Four-Wave Mixing in Silicon Nanowire Rings Without Dispersion Engineering,” IEEE J. Sel. Top. Quantum Electron, vol. 17, no. 4, pp. 1078–1091, 2011.

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A full overview of all publications in the field of Integrated Photonics can be found in our publication database

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Hugo Thienpont
Prof. Dr. Ir.
Hugo Thienpont
Managing Director
Nadia Cornand

Nadia Cornand
+32 2 791 68 52

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